Photogalvanic effect in silicene

Silicene has introduced itself as an outstanding novel material, which seeks its meritorious place among common spintronic devices like Cu and Ag. In this work, photogalvanic effect in silicene is studied within the semi-classical approach beyond Dirac point approximation. Normal electric field plays role of effective pseudo-magnetic breaks inversion symmetry splits conduction valence bands. The interplay between external intrinsic spin-orbit coupling provides spin-valley locking silicene. Spin-valley makes material superior to carbon counterpart, graphene. Since absorption polarized photons not equivalent at both valleys, leads a spin-polarized photocurrent injection.